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| SI4427DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = -10 V -30 30 0.0125 @ VGS = -4.5 V 0.0195 @ VGS = -2.5 V ID (A) -13.3 -12.2 -9.8 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -2.5 3.0 1.9 -55 to 150 -10.7 -50 -1.3 1.5 W 0.9 _C -7.5 A Symbol VDS VGS 10 secs Steady State -30 "12 Unit V -13.3 -9.4 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71308 S-01828--Rev. A, 21-Aug-00 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 32 68 15 Maximum 42 85 18 Unit _C/W 1 SI4427DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "12 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -13.3 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -4.5 V, ID = -12.2 A VGS = -2.5 V, ID = -9.8 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -15 V, ID = -13.3 A IS = -2.5 A, VGS = 0 V -50 0.0086 0.0105 0.0165 40 -0.8 -1.2 0.0105 0.0125 0.0195 S V W -0.60 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.5 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -15 V VGS = -4.5 V, ID = -13.3 A 15 V, 45V 13 3 47 20 8.3 16 12 220 70 50 25 20 330 110 80 ns 70 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C -55_C 1.5 2.0 2.5 3.0 10 2V 10 0 0 1 2 3 4 5 0 0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71308 S-01828--Rev. A, 21-Aug-00 SI4427DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.030 r DS(on) - On-Resistance ( W ) 9000 Vishay Siliconix Capacitance 0.025 VGS = 2.5 V 0.020 C - Capacitance (pF) 7500 Ciss 6000 0.015 VGS = 4.5 V 0.010 VGS = 10 V 4500 3000 Coss 1500 Crss 0.005 0 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 13.3 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13.3 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 40 60 80 100 120 1.2 4 1.0 2 0.8 0 0 20 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.025 ID = 13.3 A I S - Source Current (A) TJ = 150_C 10 0.020 0.015 TJ = 25_C 0.010 0.005 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71308 S-01828--Rev. A, 21-Aug-00 www.vishay.com 3 SI4427DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.0 29 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71308 S-01828--Rev. A, 21-Aug-00 |
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